silicon photo transistor 1. structure 1.1 chip size : 0.62mm x 0.42mm 1.2 chip thickness : 220 30um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - emitter : 160um - base : 60um x 60um 2. electro-optical characteristics (ta=25 ) symbol min typ max unit condition p 880 nm nm *parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856k. 3. guaranteed probed electrical characteristics (ta=25 ) symbol min typ max unit bv ceo 70 v bv ebo 6v bv eco 7v i ceo 50 na v ces 0.2 v tr/tf us h fe 1300 2,000 - eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. peak sensing wavelength parameter rise/fall time c-e saturation voltage e-b voltage v ce =5v, ic=2ma dc current gain v ce =20v i e =10ua v ce =5v, i c =1ma, rl-1000 c-e leakage current e-c voltage 15/15(typ) i c =2ma, i b =100ua i e =100ua OPB0642 i c =100ua condition parameter c-e voltage 500~1,050 spectrum sensitivity : emitter electrode : base electrode
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